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  sanrex 50 seaview blvd. port washington, ny 11050-4618 ph.(516)625-1313 fax(516)625-8845 e-mail: semi@sanrex.com pk ( pd,pe ) 55fg thyristor module symbol item conditions ratings 55 unit i t  av  ? average on-state current i t  rms  ? r.m.s. on-state current single phase, half wave, 180 ? conduction, tc 1 81? single phase, half wave, 180 ? conduction, tc 1 81? i tsm ? surge on-state current i 2 t ? i 2 t p gm peak gate power dissipation p g  av average gate power dissipation i fgm peak gate current v fgm peak gate voltage (forward) 1 ? 2 cycle, 50 / 60h z , peak value, non-repetitive value for one cycle surge current a 86 a 1190/ 1300 a 7040 10 a 2 s w 1 v rgm peak gate voltage (reverse) di/ dt critical rate of rise of on-state current i g 1 100ma| v d 1 1 ? 2 v drm | di g / dt 1 0.1a /  s tj ? operating junction temperature tstg ? storage temperature mounting torque mounting  m5  terminal  m5 mass recommended value 1.5-2.5  15-25  recommended value 1.5-2.5  15-25  typical value 3 w a 10 v 5 v 100 a /  s  40 up 125 ? v iso ? isolation breakdown voltage  r.m.s a.c. 1minute 2500 v  40 up 125 2.7  28 2.7  28 170 ? nkm  f kb g symbol item conditions ratings 15 unit i drm repetitive peak off-state current,max i rrm ? repetitive peak reverse current,max tj1 125 ?| v d 1 v drm tj1 125 ?| v d 1 v drm v tm ? on-state voltage,max i gt gate trigger current,max v gd gate trigger voltage,min dv/ dt critical rate of rise of off-state voltage,min i t 1 165a v d 1 6v| i t 1 1a ma 15 ma 1.6 v 50 tj1 125 ?| v d 1 1 ? 2 v drm 0.25 ma v gt gate trigger voltage,max v d 1 6v| i t 1 1a 3 v v tj1 125 ?| v d 1 2 ? 3 v drm rth  j-c ? thermal impedance,max junction to case 1000 v/  s 0.5 ? / w  electrical characteristics  maximum ratings  tj1 25 ? unless otherwise specified  }   }  }  }    }  ? }  /".&1-"5& .   }   }     }    ?  }   }  }  ."9 }  }  }   }  }   }      5"#  } , ( , ( unit a ? i t(av) 55a, i t(rms) 86a, i tsm 1300a ? di/dt 100a/  s ? dv/dt 1000v/  s  applications  various rectifiers ac/dc motor drives heater controls light dimmers static switches internal configurations power thyristor/diode module pk55fg series are designed for various rectifier circuits and power controls. for your circuit application, following internal connections and wide voltage ratings up to 1600v are available. and electrically isolated mounting base make your mechanical design easy. symbol item pk55fg40 pd55fg40 pe55fg40 ratings pk55fg120 pd55fg120 pe55fg120 unit v rrm ? repetitive peak reverse voltage 400 1200 v 480 1300 v 400 pk55fg80 pd55fg80 pe55fg80 800 960 800 1200 PK55FG160 pd55fg160 pe55fg160 1600 1700 1600 v v rsm v drm ? non-repetitive peak reverse voltage ? repetitive peak off-state voltage ?mark thyristor and diode part. no markthyristor part ul;e76102  m , " , ", ( , (  pk , " , ", , (    pe , " , ", ( ,    pd
pk ( pd,pe ) 55fg  ? 7 '(. 7 7 (% 1 ( .   8  * '(. "  1 ( "7  8  (buf$ibsbdufsjtujdt (buf$vssfou n"              }   }   }                                 (buf7pmubhf 7 )9   ? .byjnvn 0o4ubuf7pmubhfnby 0o4ubuf7pmubhf 7  }   }  } } }                  0o4ubuf$vssfou " )9  ?tubsu 1fs0of&mfnfou   ) ;   ) ;                              5jnfdzdmft 4vshf0o4ubuf$vssfou3bujoh  /po3fqfujujwf 4vshf0o4ubuf$vssfou " +vodujpoup$btf 1fs0of&mfnfou                  }     }     }     }    }    }    }   }   }   5jnf u tfd 5sbotjfou5ifsnbm*nqfebodf 5sbotjfou5ifsnbm*nqfebodf  kd ?8


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